| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
267 pcs
|
267 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFA7N80P is an N-Channel MOSFET manufactured by IXYS. It is designed for high-voltage switching applications with a maximum drain-to-source voltage of 800V and a continuous drain current of 7A at case temperature. The device features a low on-resistance of 1.44 Ohm maximum at 3.5A and 10V gate drive, ensuring efficient power handling. Gate charge is 32 nC and input capacitance is 1890 pF, contributing to moderate switching speeds. The MOSFET is housed in a surface mount TO-263-3 (D²Pak) package, suitable for automated assembly. It operates over a junction temperature range of -55°C to 150°C, making it robust for industrial environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.82 | $5.82 |
| 10+ | $3.05 | $3.05 |
| 100+ | $2.77 | $2.77 |
| 500+ | $2.38 | $2.38 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V maximum.
7A maximum at Tc.
1.44 Ohm maximum at 3.5A, 10V.
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB surface mount.
-55°C to 150°C (junction).
RoHS3 Compliant (unverified).
32 nC maximum at 10V.