| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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| Tape & Reel | |
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The IXFA6N120P is a 1200V, 6A N-Channel enhancement-mode power MOSFET from IXYS. It is part of the Polar HiPerFET series and is avalanche rated for ruggedness in high-voltage switching applications. The device offers a maximum on-resistance of 2.75Ω at VGS = 10V and ID = 3A, with gate threshold voltage ranging from 2.5V to 5V. It supports a maximum power dissipation of 250W at TC = 25°C and operates over a junction temperature range of -55°C to +150°C. The internal source-drain diode has fast reverse recovery characteristics, with a typical reverse recovery time of 300 ns.
Key electrical characteristics include typical input capacitance of 2830 pF, output capacitance of 150 pF, and reverse transfer capacitance of 30 pF at VDS = 25V, f = 1MHz. Total gate charge is 92 nC at VGS = 10V, which aids in low-drive-power applications. The device is rated for a drain current of 6A continuous at 25°C case temperature, and 18A pulsed. It can handle 300 mJ of avalanche energy and has a maximum dv/dt rating of 10 V/ns.
The IXFA6N120P is supplied in a TO-263-3 (D2Pak) surface-mount package with a gull-wing lead style and a drain tab. The supplier device package is TO-263AA (IXFA). This package is suitable for space-constrained PCB designs and provides low package inductance.
Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, uninterruptible power supplies, AC motor drives, and high-speed power switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $13.20 | $13.20 |
| 10+ | $7.49 | $7.49 |
| 100+ | $7.03 | $7.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 1200V.
The continuous drain current is rated at 6A at TC = 25°C.
The maximum on-resistance is 2.75Ω at VGS = 10V and ID = 3A.
The device operates over a junction temperature range of -55°C to +150°C.
It is available in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package for surface-mounting.
Yes, it has an avalanche energy rating of 300 mJ at TC = 25°C.
The product database lists it as RoHS3 compliant, but this is not independently verified.