IXFA6N120P The IXFA6N120P is an N-Channel enhancement-mode power MOSFET with 1200V drain-source voltage and 6A continuous drain current. It comes in a surface-mount TO-263 package and features a fast intrinsic diode and avalanche rating.
Mfr Part #:

IXFA6N120P

Available from 1 distributors
Mfr Name: IXYS
IXYS
The IXFA6N120P is an N-Channel enhancement-mode power MOSFET with 1200V drain-source voltage and 6A continuous drain current. It comes in a surface-mount TO-263 package and features a fast intrinsic diode and avalanche rating.
Total Stock: 2,500 pcs
$ Price Range: $7.03 - $13.20

IXFA6N120P Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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2,500 pcs
2500 pcs On Request 1 On Request On Request 18+ On Request On Request

IXFA6N120P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

IXFA6N120P Description

Short technical summary and product information.

The IXFA6N120P is a 1200V, 6A N-Channel enhancement-mode power MOSFET from IXYS. It is part of the Polar HiPerFET series and is avalanche rated for ruggedness in high-voltage switching applications. The device offers a maximum on-resistance of 2.75Ω at VGS = 10V and ID = 3A, with gate threshold voltage ranging from 2.5V to 5V. It supports a maximum power dissipation of 250W at TC = 25°C and operates over a junction temperature range of -55°C to +150°C. The internal source-drain diode has fast reverse recovery characteristics, with a typical reverse recovery time of 300 ns.

 

Key electrical characteristics include typical input capacitance of 2830 pF, output capacitance of 150 pF, and reverse transfer capacitance of 30 pF at VDS = 25V, f = 1MHz. Total gate charge is 92 nC at VGS = 10V, which aids in low-drive-power applications. The device is rated for a drain current of 6A continuous at 25°C case temperature, and 18A pulsed. It can handle 300 mJ of avalanche energy and has a maximum dv/dt rating of 10 V/ns.

 

The IXFA6N120P is supplied in a TO-263-3 (D2Pak) surface-mount package with a gull-wing lead style and a drain tab. The supplier device package is TO-263AA (IXFA). This package is suitable for space-constrained PCB designs and provides low package inductance.

 

Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, uninterruptible power supplies, AC motor drives, and high-speed power switching circuits.

IXFA6N120P Quick Information

Product Type: Power MOSFET
Series: Polar
Canonical Name: N-Channel 1200V 6A Power MOSFET
Subcategory: Single N-Channel MOSFET

IXFA6N120P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFA6N120P Estimated Pricing

Qty Low High
1+ $13.20 $13.20
10+ $7.49 $7.49
100+ $7.03 $7.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFA6N120P Features

  • Rated for 1200V drain-source breakdown voltage.
  • Supports 6A continuous drain current.
  • Maximum on-resistance is 2.75 ohms.
  • Fast intrinsic diode recovers in 300ns.
  • Offered in TO-263 surface-mount package.

IXFA6N120P Applications

  • Ideal for DC-DC converter circuits.
  • Suitable for switch-mode power supplies.
  • Used in battery charger applications.
  • Supports uninterruptible power supplies.
  • For high-speed power switching applications.

IXFA6N120P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IXFA6N120P?

The minimum drain-source breakdown voltage is 1200V.

What is the continuous drain current rating?

The continuous drain current is rated at 6A at TC = 25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 2.75Ω at VGS = 10V and ID = 3A.

What is the operating temperature range?

The device operates over a junction temperature range of -55°C to +150°C.

What package does the IXFA6N120P come in?

It is available in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package for surface-mounting.

Is the IXFA6N120P avalanche rated?

Yes, it has an avalanche energy rating of 300 mJ at TC = 25°C.

Is the IXFA6N120P RoHS compliant?

The product database lists it as RoHS3 compliant, but this is not independently verified.

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