Mfr Part #:

IXFA4N100Q

Mfr Name: IXYS

N-Channel MOSFET from IXYS with 1000V drain-source voltage rating and 4A continuous drain current. Features low on-resistance of 3Ω and surface mount TO-263 package.

✓ Total Stock: 564 pcs

$ Price Range: $6.13 - $11.73

IXFA4N100Q Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	564 pcs On Request	564 pcs	On Request	1	On Request	On Request	1524+	On Request	On Request

IXFA4N100Q Description

Short technical summary and product information.

The IXFA4N100Q is an N-Channel enhancement mode MOSFET manufactured by IXYS using Metal Oxide technology. It is designed for high voltage applications, featuring a drain-source voltage rating of 1000V and a continuous drain current of 4A at Tc. The device offers a maximum on-resistance of 3Ω at 2A and 10V gate drive. The gate threshold voltage is 4.5V at 1.5mA. Maximum gate charge is 39nC at 10V, and input capacitance is 1050pF at 25V. Power dissipation is rated at 150W at case temperature. The operating temperature range spans -55°C to 150°C. The device is surface mount in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, specifically the TO-263AA (IXFA) supplier device package. This combination of high voltage rating and moderate current capability makes it suitable for high voltage switching applications such as power supplies and converters.

IXFA4N100Q Quick Information

Product Type: N-Channel MOSFET

Canonical Name: IXFA4N100Q N-Channel MOSFET

Subcategory: Single MOSFET

IXFA4N100Q Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

IXFA4N100Q Estimated Pricing

Qty	Low	High
1+	$11.73	$11.73
10+	$6.68	$6.68
100+	$6.16	$6.16
500+	$6.13	$6.13

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFA4N100Q Features

N-Channel MOSFET rated for 1000V drain-source voltage.
Continuous drain current of 4A at Tc.
Low on-resistance of 3Ω maximum.
Surface mount TO-263 (D²Pak) package.
RoHS compliant with MSL Level 1.

IXFA4N100Q Applications

Ideal for high voltage DC-DC converters.
Used in switching power supplies.
Suitable for high voltage relay drivers.
Applicable in inverters and motor control.

IXFA4N100Q FAQs

7 frequently asked questions generated from this part’s specifications.

What is the operating voltage of IXFA4N100Q?

The drain-source voltage (Vds) rating is 1000V.

What is the package type of IXFA4N100Q?

The package is TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, with supplier device package TO-263AA (IXFA).

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What is the RoHS status of IXFA4N100Q?

The device is marked as RoHS3 Compliant, but this is unverified.

What is the maximum drain current?

The maximum continuous drain current is 4A at Tc.

What is the maximum on-resistance?

The maximum on-resistance (Rds on) is 3Ω at 2A and 10V.

What is the maximum power dissipation?

The maximum power dissipation is 150W at Tc.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	IXYS
Current	4 A (Tc)
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1050 pF @ 25 V
Lead Style	Gull Wing
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	150 W (Tc)
Rds On (Max) @ Id, Vgs	3 Ω @ 2 A, 10 V
Supplier Device Package	TO-263AA (IXFA)
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	4.5 V @ 1.5 mA