Mfr Part #:

IXFA4N100P

Mfr Name: IXYS

IXFA4N100P is a high-voltage N-Channel Power MOSFET from IXYS, rated for 1000V drain-source voltage and 4A continuous drain current, with a maximum on-resistance of 3.3Ω.

✓ Total Stock: 4 pcs

$ Price Range: $2.55 - $6.12

IXFA4N100P Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Speed Components Ltd ✓ Non-Authorised Inventory information	4 pcs On Request	4 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IXFA4N100P Description

Short technical summary and product information.

IXFA4N100P is a 1000V, 4A N-Channel enhancement mode Power MOSFET from IXYS, part of the Polar HiPerFET family. It features a drain-source breakdown voltage of 1000V and a continuous drain current of 4A at 25°C case temperature, with a pulsed drain current capability of 8A.

The device has a maximum drain-source on-resistance of 3.3Ω at Vgs=10V and Id=2A. Gate threshold voltage ranges from 3.0V to 6.0V at Id=250µA. The MOSFET can dissipate up to 150W and operates over a junction temperature range of -55°C to 150°C.

It is avalanche rated with a single-pulse avalanche energy of 200mJ and features a fast intrinsic rectifier diode. The MOSFET comes in a surface mount TO-263-3 (D²Pak) package with a TO-263AA (IXFA) supplier package designation, weighing 2.5g.

Suitable for switch-mode power supplies, DC-DC converters, laser drivers, and AC/DC motor drive applications.

IXFA4N100P Quick Information

Product Type: Power MOSFET

Canonical Name: IXYS IXFA4N100P N-Channel Power MOSFET 1000V 4A TO-263AA

Subcategory: High Voltage MOSFET

IXFA4N100P Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IXFA4N100P Estimated Pricing

Qty	Low	High
1+	$6.12	$6.12
10+	$3.22	$3.22
100+	$2.93	$2.93
500+	$2.55	$2.55

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFA4N100P Features

1000V drain-source breakdown voltage.
4A continuous drain current at 25°C.
3.3Ω maximum drain-source on-resistance.
Avalanche rated for 200mJ single pulse.
Surface mount TO-263AA (D²Pak) package.

IXFA4N100P Applications

Switch-mode and resonant-mode power supplies.
DC-DC converter circuits.
Laser driver applications.
AC and DC motor drives.
Robotics and servo control systems.

IXFA4N100P FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the IXFA4N100P?

The maximum drain-source voltage (VDSS) is 1000V at Tj = 25°C to 150°C.

What is the continuous drain current rating?

The continuous drain current is 4A at Tc = 25°C.

What is the operating temperature range of this MOSFET?

The operating junction temperature range is -55°C to 150°C.

What package does the IXFA4N100P come in?

It is available in a surface mount TO-263-3 (D²Pak) package, specifically TO-263AA (IXFA).

Is the IXFA4N100P RoHS compliant?

It is listed as RoHS3 Compliant, but this is unverified and should be confirmed with the manufacturer.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	IXYS
Current	4 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	26 nC
Input Capacitance (Ciss) (Max) @ Vds	1456 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	3.3 Ω
Supplier Device Package	TO-263AA (IXFA)
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30 V
Vgs(th) (Max) @ Id	3.0 V ~ 6.0 V
Weight	2.5 g