| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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110 pcs
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110 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The IXFA3N120 is an N-channel MOSFET transistor manufactured by IXYS. It offers a high drain-source voltage rating of 1.2kV and a continuous drain current of 3A, with a power dissipation of 200W. This unipolar transistor features an enhancement mode channel.
The device is housed in a TO263 package, suitable for surface-mount (SMD) applications. Its electrical characteristics include a gate charge of 39nC. The IXFA3N120 is designed for various power switching and amplification applications where high voltage and moderate current handling are required.
This component is specified with a Moisture Sensitivity Level (MSL) of 1, indicating unlimited shelf life under standard conditions. The RoHS status is compliant, and REACH status is unaffected, though these compliance details are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 1.2kV.
The continuous drain current is 3A.
The power dissipation is 200W.
The IXFA3N120 is supplied in a TO263 package for SMD mounting.
The gate charge is 39nC.