| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| IGBT Type | |
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| NTC Thermistor | |
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| Vce(on) (Max) @ Vge, Ic | |
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The IXEN60N120 is a single NPT3 IGBT module from IXYS designed for high power switching applications. It is rated for a maximum collector-emitter voltage of 1200V and can handle a DC collector current of 100A at 25°C case temperature (65A at 90°C). The device dissipates up to 445W at 25°C and features a typical collector-emitter saturation voltage of 2.1V at 60A and 15V gate drive.
This IGBT offers fast switching with typical turn-on delay time of 80ns, rise time of 50ns, turn-off delay of 680ns, and fall time of 30ns. The typical turn-on and turn-off switching energies are 7.2mJ and 4.8mJ respectively (inductive load at 125°C, 600V, 60A). The gate threshold voltage ranges from 4.5V to 6.5V, and the total gate charge is 350nC.
The module is housed in the industry-standard SOT-227B (miniBLOC) package with an isolated copper base plate and screw terminals for chassis mounting. The package includes a Kelvin emitter terminal for simplified gate drive design. The junction-to-case thermal resistance is 0.28K/W, and the isolation voltage is 2500V.
The maximum collector-emitter voltage (VCES) is 1200V from TVJ = 25°C to 150°C.
The maximum DC collector current is 100A at TC = 25°C and 65A at TC = 90°C.
The device is supplied in a SOT-227-4, miniBLOC package (SOT-227B) intended for chassis mounting.
The operating junction temperature range is -40°C to 150°C.
The typical VCE(sat) is 2.1V at IC = 60A, VGE = 15V, TVJ = 25°C, with a maximum of 2.7V.
No, the module does not include an NTC thermistor.