| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,000 pcs
|
28000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
728 pcs
|
728 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
610 pcs
|
610 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Channel Type | |
| Current | |
| Driven Configuration | |
| Gate Type | |
| Halogen Free | |
| Industrial Grade | |
| Input Type | |
| Lead Style | |
| Logic Voltage | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Number of Drivers | |
| Operating Temperature | |
| Operating Voltage | |
| Rise | |
| SVHC Present | |
| Supplier Device Package | |
| Voltage |
The IXDN604SITR is a low-side gate driver IC manufactured by IXYS. It is designed to drive IGBTs and N-channel or P-channel MOSFETs. The device features two independent driver channels, each capable of sourcing and sinking 4A peak output current. It operates over a wide supply voltage range from 4.5V to 35V. The driver has a typical rise time of 9ns and fall time of 8ns, enabling fast switching. The input type is non-inverting with logic voltage thresholds of 0.8V and 3V. The IC is housed in an 8-SOIC package with an exposed pad for improved thermal performance. It is rated for operation over the temperature range of -40°C to +125°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage range is 4.5V to 35V.
The peak output current is 4A per channel.
The IXDN604SITR is available in an 8-SOIC package with exposed pad.
The operating temperature range is -40°C to +125°C.
It can drive IGBTs and N-channel or P-channel MOSFETs.
The typical rise time is 9ns.