| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | 21/ | On Request | On Request |
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The IXDN602SITR is a dual, non-inverting low-side gate driver designed by IXYS for driving IGBTs and N-Channel or P-Channel MOSFETs. Each of its two independent channels can source and sink 2A of peak gate drive current, enabling fast switching of power transistors in a variety of power conversion and motor control applications.
The device operates from a supply voltage between 4.5V and 35V, with input logic thresholds of 0.8V (low) and 3V (high). Typical rise times are 7.5ns for the high-side output and 6.5ns for the low-side output, supporting high-frequency switching designs. The driver is specified for operation over a junction temperature range of -55°C to 150°C.
The IXDN602SITR is housed in an 8-SOIC package with an exposed pad for improved thermal performance. It is surface-mountable, making it suitable for compact PCB layouts in industrial and automotive power systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The supply voltage range is 4.5V to 35V.
Each channel can source and sink 2A peak output current.
It can drive IGBTs, N-Channel MOSFETs, and P-Channel MOSFETs.
The junction temperature range is -55°C to 150°C.
It is available in an 8-SOIC package with an exposed pad.