| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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18,535 pcs
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18535 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
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1,077 pcs
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1077 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3 pcs
|
3 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The IXDN602SIATR is a dual low-side gate driver IC from IXYS designed for driving IGBTs and N-channel or P-channel MOSFETs. It provides two independent non-inverting channels, each capable of sourcing and sinking 2A peak current. The device operates over a wide supply voltage range of 4.5V to 35V, making it suitable for a variety of power management applications.
Typical rise and fall times are 7.5ns and 6.5ns respectively, enabling efficient high-frequency switching. The driver is specified for an operating junction temperature range of -55°C to 150°C, supporting use in harsh environments. The input logic thresholds are 0.8V (low) and 3V (high).
The IXDN602SIATR is offered in a surface-mount 8-SOIC package. It is RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The supply voltage range is 4.5V to 35V.
The peak output current is 2A for both source and sink.
The operating junction temperature range is -55°C to 150°C.
It is available in an 8-SOIC surface-mount package.
Yes, it is RoHS compliant.
It can drive IGBTs, N-channel MOSFETs, and P-channel MOSFETs.
It has two independent driver channels.