| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,550 pcs
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5550 pcs | On Request | 1 | On Request | On Request | 2133 | On Request | On Request | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,457 pcs
|
1457 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IXDN602SIA is a dual-channel, low-side gate driver integrated circuit manufactured by IXYS. Designed for driving IGBTs and N-channel/P-channel MOSFETs, it features independent channels and non-inverting inputs.
This device operates with a logic voltage of 0.8V or 3V and a supply voltage range of 4.5V to 35V. It can deliver 2A of current per channel, with specified rise times of 7.5ns and 6.5ns. The operating temperature range is -55°C to 150°C (TJ).
The IXDN602SIA is housed in a standard 8-SOIC surface-mount package, measuring 0.154 inches (3.90mm) in width. Its robust design and specifications make it suitable for various power management applications requiring efficient gate driving.
Environmental compliance includes RoHS3 compliance and an MSL 1 rating. The REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The supply voltage range is 4.5V to 35V.
It comes in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.
The junction temperature range is -55°C to 150°C.
It drives IGBTs, N-Channel MOSFETs, and P-Channel MOSFETs.
The device contains 2 independent low-side drivers.
Each driver provides 2A peak source and sink current.