| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
575 pcs
|
575 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
280 pcs
|
280 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The IXDN602PI is a dual low-side gate driver IC manufactured by IXYS. This component is designed to drive N-channel and P-channel MOSFETs, as well as IGBTs, making it versatile for various power control applications. It features independent channels and non-inverting inputs, simplifying circuit design.
The device operates with a logic voltage range of 0.8V and 3V, and a supply voltage from 4.5V to 35V. It can deliver up to 2A of current per channel, with fast switching characteristics indicated by rise times of 7.5ns and 6.5ns. The operating temperature range is -55°C to 150°C (TJ), ensuring reliability in demanding environments.
Packaged in an 8-DIP form factor with through-hole mounting, the IXDN602PI is suitable for applications where robust connections and ease of assembly are required. Its RoHS3 compliance indicates adherence to environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
4.5V to 35V.
8-DIP (0.300", 7.62mm) through-hole package.
-55°C to 150°C (junction temperature).
2A peak.
2 independent channels.
IGBT, N-Channel MOSFET, P-Channel MOSFET.
Non-inverting.