| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
56 pcs
|
56 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Tape & Reel | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The IXDH30N120D1 is a single NPT (Non-Punch Through) IGBT from IXYS designed for high-power switching applications. It offers a maximum collector-emitter breakdown voltage of 1200V and a continuous collector current rating of 60A. The device can dissipate up to 300W of power. Typical saturation voltage (Vce(on)) is 2.9V at a gate voltage of 15V and collector current of 30A. Switching characteristics include an on-state switching energy of 4.6 mJ and off-state energy of 3.4 mJ under test conditions of 600V, 30A, and 47 ohm gate resistance. The reverse recovery time of the internal diode is 40 ns. The IGBT operates over a junction temperature range of -55°C to 150°C. It is housed in a TO-247-3 package with through-hole mounting, suitable for efficient thermal management in power circuits.
| Qty | Low | High |
|---|---|---|
| 30+ | $7.01 | $7.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200V.
TO-247-3 (through-hole).
-55°C to 150°C (junction temperature).
Yes, RoHS3 compliant (unverified).
120 nC.
2.9V typical at 15V gate voltage and 30A collector current.
4.6 mJ (on) and 3.4 mJ (off) at 600V, 30A, 47 ohm gate resistance.