IXDH20N120D1 The IXDH20N120D1 is an NPT IGBT from IXYS rated for 1200 V collector-emitter voltage and 38 A continuous collector current. It is supplied in a TO-247-3 through-hole package with a 200 W power dissipation rating.
Mfr Part #:

IXDH20N120D1

Available from 1 distributors
Mfr Name: IXYS
IXYS
The IXDH20N120D1 is an NPT IGBT from IXYS rated for 1200 V collector-emitter voltage and 38 A continuous collector current. It is supplied in a TO-247-3 through-hole package with a 200 W power dissipation rating.
✓ Total Stock: 3,200 pcs
$ Price Range: $4.36

IXDH20N120D1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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3,200 pcs
3200 pcs On Request 1 On Request On Request On Request On Request On Request

IXDH20N120D1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Supplier Device Package
Supplier Package
Switching Energy
Tape & Reel
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

IXDH20N120D1 Description

Short technical summary and product information.

The IXDH20N120D1 is a discrete NPT IGBT manufactured by IXYS. It is rated for a 1200 V collector-emitter voltage and a continuous collector current of 38 A, with a maximum power dissipation of 200 W. The collector-emitter saturation voltage is specified at 3 V maximum under Vge = 15 V and Ic = 20 A conditions.

 

The device features a gate charge of 70 nC and switching energy losses of 3.1 mJ turn-on and 2.4 mJ turn-off at 600 V, 20 A, 82 Ω gate resistance, and 15 V gate drive. A reverse recovery time of 40 ns is also specified. The operating junction temperature range is -55°C to 150°C.

 

The IXDH20N120D1 is packaged in a TO-247-3 through-hole package, with a supplier device package designation of TO-247AD. The input type is listed as standard.

IXDH20N120D1 Quick Information

Product Type: Insulated Gate Bipolar Transistor (IGBT)
Canonical Name: IXDH20N120D1 NPT IGBT
Subcategory: Single IGBT

IXDH20N120D1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 - Unlimited
REACH Status: REACH Unaffected

IXDH20N120D1 Estimated Pricing

Qty Low High
300+ $4.36 $4.36

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXDH20N120D1 Features

  • NPT IGBT rated at 1200 V.
  • Handles 38 A continuous collector current.
  • Dissipates up to 200 W power.
  • Low gate charge of 70 nC.
  • Available in TO-247-3 through-hole package.

IXDH20N120D1 Applications

  • For high-voltage power switching circuits.
  • Suitable for through-hole PCB assembly.
  • Supports continuous collector currents up to 38 A.

IXDH20N120D1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the IXDH20N120D1?

The IXDH20N120D1 is rated for a collector-emitter voltage of 1200 V.

What package is the IXDH20N120D1 available in?

The device comes in a TO-247-3 through-hole package, with a supplier device package of TO-247AD.

What is the operating temperature range of the IXDH20N120D1?

The operating junction temperature range is -55°C to 150°C.

Is the IXDH20N120D1 RoHS compliant?

The existing product record marks this part as RoHS3 compliant, but the compliance status is unverified.

What continuous collector current can the IXDH20N120D1 handle?

The continuous collector current rating is 38 A.

What is the power dissipation limit for the IXDH20N120D1?

The maximum power dissipation is 200 W.

What is the collector-emitter saturation voltage at Vge = 15 V and Ic = 20 A?

The collector-emitter saturation voltage is 3 V maximum.

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