| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,804 pcs
|
1804 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The IXDD604SIATR is a dual-channel, low-side gate driver manufactured by IXYS. It is designed to drive IGBT, N-Channel, and P-Channel MOSFETs with independent control for each channel.
This gate driver operates with a supply voltage range of 4.5V to 35V and features a non-inverting input. Key electrical characteristics include a peak output current of 4A (source and sink) and typical rise/fall times of 9ns and 8ns, respectively. The logic voltage thresholds are 0.8V for VIH and 3V for VIL.
Designed for surface mounting, the IXDD604SIATR comes in an 8-SOIC package with an exposed pad. It operates within a temperature range of -40°C to 125°C (TA). The component is suitable for applications requiring efficient driving of power transistors in a low-side configuration.
Environmental compliance includes RoHS3 compliance, MSL 1 (Unlimited) moisture sensitivity, and REACH unaffected status. The standard package quantity is 100 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
4.5V to 35V.
4A peak source and sink.
Two independent channels.
8-SOIC with exposed pad (8-SOIC-EP).
-40°C to 125°C.
0.8V low and 3V high.
IGBT, N-Channel MOSFET, and P-Channel MOSFET.