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IXBX75N170 IXYS IXBX75N170 is a 1700V, 110A BiMOSFET IGBT in a PLUS247-3 through-hole package. It offers high blocking voltage and fast switching for power conversion applications.
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IXBX75N170

Available from 1 distributors
Mfr Name: IXYS
IXYS
IXYS IXBX75N170 is a 1700V, 110A BiMOSFET IGBT in a PLUS247-3 through-hole package. It offers high blocking voltage and fast switching for power conversion applications.
✓ Total Stock: 2,500 pcs
$ Price Range: $68.79 - $80.45

IXBX75N170 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
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2,500 pcs
On Request
2500 pcs On Request 1 On Request On Request On Request On Request On Request
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IXBX75N170 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
Input Type
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Storage Temperature
Supplier Device Package
Tape & Reel
Vce(on) (Max) @ Vge, Ic
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IXBX75N170 Description

Short technical summary and product information.

The IXYS IXBX75N170 is a high-voltage BiMOSFET IGBT designed for switch-mode power supplies, UPS systems, and AC motor drives. It combines a monolithic bipolar MOS transistor with an anti-parallel diode for robust operation.

 

Key electrical specifications include a collector-emitter voltage (VCES) of 1700V, continuous collector current of 110A at 25°C and 65A at 90°C, and a pulsed current capability of 300A. The collector-emitter saturation voltage is typically 4.95V to 6.00V at 42A and 15V gate drive. Switching characteristics include a typical turn-off fall time of 60ns and turn-off energy loss of 3.80mJ.

 

The device is housed in the industry-standard PLUS247-3 through-hole package, providing high power density and low thermal resistance. With a maximum power dissipation of 1040W at 25°C case temperature and an operating junction temperature range of -55°C to 150°C, it is suited for demanding power electronics environments.

IXBX75N170 Quick Information

Product Type: IGBT
Canonical Name: IXYS IXBX75N170 BiMOSFET IGBT
Subcategory: Single

IXBX75N170 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXBX75N170 Estimated Pricing

Qty Low High
1+ $80.45 $80.45
10+ $68.79 $68.79

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXBX75N170 Features

  • 1700V maximum collector-emitter blocking voltage.
  • 110A continuous collector current at 25°C.
  • PLUS247-3 through-hole package for easy mounting.
  • Fast switching with 60ns typical fall time.
  • Integrated anti-parallel diode for protection.

IXBX75N170 Applications

  • Use in switch-mode power supply designs.
  • Ideal for uninterruptible power supplies (UPS).
  • Suitable for AC motor drive inverters.

IXBX75N170 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the IXBX75N170?

The maximum collector-emitter voltage (VCES) is 1700V.

What is the continuous collector current rating at 25°C?

The continuous collector current (IC25) is 110A at 25°C.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package does the IXBX75N170 use?

It uses a PLUS247-3 through-hole package (TO-247 variant).

Does the IXBX75N170 have RoHS compliance?

RoHS status is declared as RoHS3 compliant but is unverified.

What is the typical gate charge of this IGBT?

The typical total gate charge (Qg) is 358 nC.

What is the power dissipation rating?

Maximum power dissipation is 1040W at 25°C case temperature.

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