| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,101 pcs
|
3101 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IXBX25N250 is a high-voltage IGBT from IXYS designed for power switching applications. It features a collector-emitter breakdown voltage of 2500V and a continuous collector current rating of 55A, with a maximum power dissipation of 300W. The device has a gate charge of 103nC and a collector-emitter saturation voltage of 3.3V at 15V gate drive and 25A collector current. The reverse recovery time is 1.6µs.
This IGBT is housed in a TO-247-3 variant package (PLUS247™-3) with through-hole mounting, suitable for high-power circuit boards. It operates over a junction temperature range of -55°C to 150°C. The standard input type makes it compatible with typical gate drive circuits.
Typical applications include high-voltage power supplies, motor drives, and induction heating systems where robust switching performance is required. The device is RoHS3 compliant (unverified) and has an MSL of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $58.72 | $58.72 |
| 10+ | $46.89 | $46.89 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 2500V.
It comes in a TO-247-3 variant package (PLUS247™-3) with through-hole mounting.
The junction temperature range is -55°C to 150°C.
It is listed as RoHS3 compliant, but this is unverified.
The continuous collector current is 55A.
The maximum power dissipation is 300W.
The gate charge is 103nC.