IXBK55N300 The IXBK55N300 is an N-channel IGBT from IXYS rated for 3000V collector-emitter voltage and 130A continuous collector current. It features 625W power dissipation and is housed in a TO-264-3 package.
Mfr Part #:

IXBK55N300

Available from 1 distributors
Mfr Name: IXYS
IXYS
The IXBK55N300 is an N-channel IGBT from IXYS rated for 3000V collector-emitter voltage and 130A continuous collector current. It features 625W power dissipation and is housed in a TO-264-3 package.
Total Stock: 1,630 pcs
$ Price Range: $111.56 - $113.83

IXBK55N300 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,630 pcs
1630 pcs On Request 1 On Request On Request On Request On Request On Request

IXBK55N300 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
Input Type
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Supplier Device Package
Tape & Reel
Vce(on) (Max) @ Vge, Ic
Voltage

IXBK55N300 Description

Short technical summary and product information.

The IXBK55N300 is a high-voltage N-channel IGBT manufactured by IXYS. It is designed for applications requiring high voltage and current handling capabilities, with a collector-emitter voltage rating of 3000V and a continuous collector current of 130A. The device offers a maximum power dissipation of 625W and a gate charge of 335nC, ensuring efficient switching performance.

 

Key electrical characteristics include a low Vce(on) of 3.2V typically at 15V gate-emitter voltage and 55A collector current, and a reverse recovery time of 1.9µs. The IGBT operates over a junction temperature range of -55°C to 150°C, making it suitable for demanding environments. It features a standard input type for easy integration with gate drive circuits.

 

The IXBK55N300 is offered in a through-hole mounting TO-264-3 package (TO-264AA supplier device package), which provides robust thermal performance and mechanical stability. This IGBT is ideal for high-power switching applications such as motor drives, inverters, and power supplies. Note that compliance data (RoHS, MSL, REACH) is unverified; please refer to the manufacturer for confirmation.

IXBK55N300 Quick Information

Product Type: IGBT (Insulated Gate Bipolar Transistor)
Canonical Name: IXYS IXBK55N300 N-Channel IGBT
Subcategory: Single IGBT

IXBK55N300 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXBK55N300 Estimated Pricing

Qty Low High
1+ $113.83 $113.83
10+ $111.56 $111.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXBK55N300 Features

  • Rated for 3000V collector-emitter voltage.
  • Supports 130A continuous collector current.
  • Dissipates up to 625W of power.
  • Low saturation voltage of 3.2V at 15V gate drive.
  • Operates from -55°C to 150°C junction temperature.

IXBK55N300 Applications

  • Used in high-voltage motor drive inverters.
  • Suitable for uninterruptible power supplies (UPS).
  • Ideal for induction heating and welding equipment.
  • Applied in high-power switch-mode power supplies.

IXBK55N300 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the IXBK55N300?

The maximum collector-emitter voltage (Vces) is 3000V.

What is the continuous collector current rating?

The continuous collector current (Ic) is 130A.

What is the power dissipation of this IGBT?

The maximum power dissipation is 625W.

What is the package type for the IXBK55N300?

The package is TO-264-3 (TO-264AA).

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

Is the IXBK55N300 RoHS compliant?

The RoHS status is listed as RoHS3 compliant, but this is unverified.

What is the gate charge of the IXBK55N300?

The gate charge (Qg) is 335nC.

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