| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,217 pcs
|
3217 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Tape & Reel | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The IXYS IXBH12N300 is a high-voltage insulated gate bipolar transistor (IGBT) designed for power switching applications. It features a collector-emitter voltage rating of 3000V and a continuous collector current of 30A, with a maximum power dissipation of 160W. The device has a collector-emitter saturation voltage of 3.2V at Vge=15V and Ic=12A, and a gate charge of 62 nC. The reverse recovery time is 1.4 µs.
The IGBT operates over a junction temperature range of -55°C to 150°C and is housed in a through-hole TO-247-3 package (supplier device package TO-247AD). It uses a standard gate drive input type. This component is suitable for high-voltage switching circuits where robust performance and reliability are required.
The IXBH12N300 is RoHS3 compliant, with an MSL of 1 (unlimited) and is REACH unaffected. However, compliance data is unverified and should be confirmed with the manufacturer.
| Qty | Low | High |
|---|---|---|
| 1+ | $48.09 | $48.09 |
| 10+ | $36.68 | $36.68 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
3000 V.
30 A.
160 W.
-55°C to 150°C (junction).
TO-247-3 (supplier device package TO-247AD).
Yes, RoHS3 compliant (unverified).
62 nC.