DistyParts Icon
IXBF9N160 The Littelfuse Inc. IXBF9N160 is a High Voltage BIMOSFET IGBT Transistor. It offers a 1600V VCES rating and a continuous drain current of 7A.
Mfr Part #:

IXBF9N160

Available from 1 distributors
Mfr Name: Littelfuse Inc.
Littelfuse Inc.
The Littelfuse Inc. IXBF9N160 is a High Voltage BIMOSFET IGBT Transistor. It offers a 1600V VCES rating and a continuous drain current of 7A.
✓ Total Stock: 3 pcs
$ Price Range: $0.99

IXBF9N160 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Braun Electronic Components ✓
Non-Authorised Inventory information
3 pcs
On Request
3 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IXBF9N160 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
View Similar Products (0)

IXBF9N160 Description

Short technical summary and product information.

The Littelfuse Inc. IXBF9N160 is a High Voltage BIMOSFET Transistor designed for high-voltage applications. This IGBT features a VCES (Collector-Emitter Voltage) of 1600V and an IC25 (Continuous Drain Current) of 7A. The VCE(sat) (Collector-Emitter Saturation Voltage) is rated at 4.9V, and the power dissipation (Ptot) is 70W.

 

This component is housed in the ISOPLUS I4-PAC package, suitable for through-hole mounting. Its monolithic bipolar MOS transistor construction provides efficient switching capabilities.

 

Key electrical characteristics include a fall time (tf) of 70ns. The device is designed for applications requiring high blocking voltage and low conduction losses.

 

This part is part of the High Voltage BIMOSFETTM series, utilizing the High Voltage ISOPLUS i4-PACTM technology.

IXBF9N160 Quick Information

Product Type: IGBT Transistor
Series: IXBF9N160
Canonical Name: Littelfuse Inc. IXBF9N160 High Voltage BIMOSFET
Subcategory: IGBT

IXBF9N160 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXBF9N160 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXBF9N160 Features

  • 1600 V collector-emitter breakdown voltage.
  • 7 A continuous drain current.
  • 4.9 V collector-emitter saturation voltage.
  • 70 ns fall time for switching.
  • 70 W power dissipation.

IXBF9N160 Applications

  • Used in transient voltage protection circuits.
  • Used in high-voltage switch applications.
  • Used in crowbar protection systems.
  • Used in laser driver modules.
  • Used in pulse generator circuits.

IXBF9N160 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the IXBF9N160?

The collector-emitter breakdown voltage (VCES) of the IXBF9N160 is 1600 V.

What is the continuous drain current of the IXBF9N160?

The continuous drain current (IC25) of the IXBF9N160 is 7 A.

What is the collector-emitter saturation voltage of the IXBF9N160?

The collector-emitter saturation voltage (VCE(sat)) of the IXBF9N160 is 4.9 V.

What is the fall time of the IXBF9N160?

The fall time (tf) of the IXBF9N160 is 70 ns.

What is the power dissipation of the IXBF9N160?

The power dissipation (Ptot) of the IXBF9N160 is 70 W.

What is the package type for the IXBF9N160?

The IXBF9N160 is provided in an ISOPLUS I4-PAC package.

What is the mounting type for the IXBF9N160?

The mounting type for the IXBF9N160 is Through Hole.

Home

Categories