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24 pcs
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24 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IXBF9N140G is an Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It is designed for high voltage applications, featuring a maximum collector-emitter breakdown voltage of 1600V and a continuous collector current rating of 7A. The device has a maximum power dissipation of 70W.
This IGBT is packaged in the i4-Pac™-5 configuration, which is suitable for through-hole mounting. The i4-Pac™ package is designed for efficient thermal management and robust electrical performance. Key electrical characteristics include a typical gate charge of 34nC and a maximum collector-emitter saturation voltage of 7V at 15V gate-emitter voltage and 5A collector current.
The IXBF9N140G belongs to the BIMOSFET™ series. Its specifications make it suitable for various power switching and control applications where high voltage and moderate current handling are required. The through-hole mounting facilitates integration into existing circuit designs.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 1600V.
The maximum continuous collector current is 7A.
The maximum power dissipation is 70W.
The package is i4-Pac™-5, supplied in a tube for through-hole mounting.
The typical gate charge is 34nC.
The Vce(on) is a maximum of 7V at 15V Vge and 5A Ic.