| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Tape & Reel | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The IXA33IF1200HB is a Punch-Through (PT) IGBT designed for high-voltage switching applications. It has a collector-emitter voltage rating of 1200V and a continuous collector current of 58A. The device can dissipate up to 250W of power. Typical switching energies are 2.5 mJ (on) and 3 mJ (off) under test conditions of 600V, 25A, and 39Ω gate resistance. The gate charge is 76 nC. The IGBT includes an anti-parallel diode with a reverse recovery time of 350 ns. It operates over a junction temperature range of -40°C to 150°C. The device is through-hole mounted in a TO-247-3 package (supplier package TO-247AD). This IGBT is suitable for applications such as motor drives, power inverters, and induction heating.
| Qty | Low | High |
|---|---|---|
| 300+ | $7.30 | $7.30 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200 V.
TO-247-3 (supplier package TO-247AD).
-40°C to 150°C.
RoHS3 compliant (unverified).
76 nC.
Eon = 2.5 mJ, Eoff = 3 mJ at 600V, 25A, 39Ω.
350 ns.