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3,200 pcs
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3200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IXYS IX6R11S6 is an integrated circuit designed as a half-bridge gate driver. It is suitable for driving IGBT and N-Channel MOSFET power transistors. The device operates within a supply voltage range of 10V to 35V and can deliver a peak output current of 6A per channel.
Key electrical characteristics include logic voltage levels of 6V and 9.6V, and a high side voltage capability of up to 600V. The rise and fall times are specified at 25ns and 17ns, respectively. The IX6R11S6 features independent channels and a non-inverting input type.
This gate driver is housed in an 18-SOIC package with a width of 7.50mm, designed for surface mounting. The operating temperature range is from -40°C to 125°C (TA). It is RoHS3 compliant and has an MSL rating of 1.
This component is well-suited for power management applications requiring efficient switching of power devices in a half-bridge configuration.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The supply voltage range is 10V to 35V.
The device is available in an 18-SOIC package with 0.295 inch (7.50mm) width.
The operating temperature range is -40°C to 125°C.
The peak output current is 6A for both source and sink.
The maximum high-side bootstrap voltage is 600V.
It can drive IGBTs and N-Channel MOSFETs.
Typical rise time is 25ns and fall time is 17ns.