| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,400 pcs
|
3400 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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The Infineon Technologies HITFET® ISP 75N is a smart lowside power switch built with Smart Power Technology. It is designed for 12V and 24V DC applications, as well as 42 Volt Powernet systems, replacing electromechanical relays and discrete circuits.
This N-channel power FET features integrated protection functions including overvoltage protection, current limitation to 1A, overload protection, short circuit protection, and thermal shutdown with auto-restart. It has a logic-level input and an open drain DMOS output stage, making it compatible with microcontrollers.
The device is housed in a PG-SOT223-4 package, suitable for surface mounting. Its typical on-state resistance is 430 mΩ, with a continuous drain source voltage rating of 60V. The nominal load current is 700mA, and it includes input protection (ESD) and a clamping energy of 550 mJ.
Applications include driving resistive, inductive, and capacitive loads in industrial environments. The ISP75N is designed to prevent IC destruction under fault conditions, ensuring reliable operation in demanding industrial settings.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.32 | $0.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain source voltage (VDS) for the ISP75N is 60V.
The typical on-state resistance (RDS(ON)) of the ISP75N is 430 mΩ.
The nominal load current (ID(Nom)) for the ISP75N is 0.7A.
The ISP75N includes current limiting (fixed), over temperature, and over voltage protection.
The operating temperature range for the ISP75N is -30°C to 85°C (TA).
The ISP75N is supplied in a TO-261-4, TO-261AA package, also referred to as PG-SOT223-4, suitable for surface mounting.