ISP20EP10LMXTSA1 P-Channel MOSFET from Infineon Technologies, rated 100V drain-source voltage, 650mA continuous drain current, with 2 Ohm maximum on-resistance at 10V gate drive.
Mfr Part #:

ISP20EP10LMXTSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
P-Channel MOSFET from Infineon Technologies, rated 100V drain-source voltage, 650mA continuous drain current, with 2 Ohm maximum on-resistance at 10V gate drive.
✓ Total Stock: 1,000 pcs
$ Price Range: $0.11 - $0.29

ISP20EP10LMXTSA1 Available from 1 distributor

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✓ Non-Authorised
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ISP20EP10LMXTSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

ISP20EP10LMXTSA1 Description

Short technical summary and product information.

The ISP20EP10LMXTSA1 is a small signal P-Channel enhancement mode MOSFET manufactured by Infineon Technologies. It features a drain-source breakdown voltage of 100V and can handle a continuous drain current of 650mA at 25°C ambient temperature, increasing to 990mA at case temperature 25°C. The device has a maximum drain-source on-resistance of 2 Ohms at 600mA drain current and 10V gate drive.

 

Designed for surface mount assembly, it comes in the PG-SOT223-4 package (also known as TO-261-4 or TO-261AA). The gate threshold voltage is 2V maximum at 78µA drain current, making it suitable for low-voltage logic-level gate drives. Total gate charge is only 3.5nC, and input capacitance is 170pF, indicating efficient switching in low-frequency and moderate-speed applications.

 

The part operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 1.8W at ambient temperature and 4.2W at case temperature. The device is intended for general-purpose switching and load management in power management circuits.

ISP20EP10LMXTSA1 Quick Information

Product Type: P-Channel MOSFET
Canonical Name: ISP20EP10LMXTSA1 Small Signal P-Channel MOSFET 100V
Subcategory: Small Signal MOSFET

ISP20EP10LMXTSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

ISP20EP10LMXTSA1 Estimated Pricing

Qty Low High
1+ $0.29 $0.29
10+ $0.18 $0.18
100+ $0.14 $0.14
500+ $0.13 $0.13
1,000+ $0.13 $0.13
2,000+ $0.12 $0.12
25,000+ $0.11 $0.11

Estimated market price range - modelled values for guidance only, not live distributor offers.

ISP20EP10LMXTSA1 Features

  • 100V maximum drain-source breakdown voltage.
  • 650mA continuous drain current at 25°C.
  • 2 Ohm maximum on-resistance at 10V gate drive.
  • Low gate charge of 3.5nC for efficient switching.
  • Surface mount PG-SOT223-4 package.

ISP20EP10LMXTSA1 Applications

  • Switch for low-power DC loads.
  • Load management in battery-powered devices.
  • General-purpose power management circuits.
  • Gate drive for small signal switching.

ISP20EP10LMXTSA1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of this MOSFET?

The maximum drain-source voltage (Vdss) is 100 V.

What is the maximum continuous drain current?

The maximum continuous drain current is 650 mA at 25°C ambient temperature and 990 mA at 25°C case temperature.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package does this MOSFET come in?

It comes in a PG-SOT223-4 package, also known as TO-261-4 or TO-261AA, for surface mount mounting.

Is this component RoHS compliant?

The component is listed as RoHS3 compliant, though this information is unverified.

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