ISO5852SMDWREP The Texas Instruments ISO5852SMDWREP is a 1-channel isolated gate driver featuring 5.7kVrms isolation and a 16-SOIC surface mount package. It offers peak output currents of 2.5A source and 5A sink.
Mfr Part #:

ISO5852SMDWREP

Available from 1 distributors
Mfr Name: Texas Instruments
Texas Instruments
The Texas Instruments ISO5852SMDWREP is a 1-channel isolated gate driver featuring 5.7kVrms isolation and a 16-SOIC surface mount package. It offers peak output currents of 2.5A source and 5A sink.
Total Stock: 1,630 pcs
$ Price Range: $7.34

ISO5852SMDWREP Available from 1 distributor

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ISO5852SMDWREP Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Approval Agency
Common Mode Transient Immunity (Min)
Current
Features
Lead Spacing
Mounting Type
Number of Channels
Operating Temperature
Propagation Delay tpLH
Rise
Supplier Device Package
Technology
Voltage

ISO5852SMDWREP Description

Short technical summary and product information.

The Texas Instruments ISO5852SMDWREP is an enhanced 1-channel isolated gate driver designed for high-voltage applications. It provides a robust isolation rating of 5.7kVrms, ensuring safety and reliability in demanding environments.

 

This gate driver supports IGBT, MOSFET, and SiCFET power switches, with a working isolation voltage of 1500 Vrms and transient isolation voltage of 8000 VPK. It delivers peak output currents of 2.5A for sourcing and 5A for sinking, facilitated by its split output design. The device operates with an input supply voltage range of 2.25V to 5.5V and an output voltage range of 15V to 30V.

 

Key electrical characteristics include a fast propagation delay of 76 ns and a high common-mode transient immunity (CMTI) of 100 kV/µs. The operating temperature range is -55°C to 125°C, making it suitable for a wide array of industrial applications. The ISO5852SMDWREP is housed in a 16-SOIC package with a surface mount type, designed for efficient integration into printed circuit boards.

 

Features such as active miller clamp, fault reporting, power good indication, short circuit protection, and soft turn-off enhance its utility in motor control and power supply designs. The device utilizes capacitive coupling technology for isolation.

ISO5852SMDWREP Quick Information

Product Type: Isolated Gate Driver
Canonical Name: ISO5852S-EP Enhanced 1-Channel Isolated Gate Driver
Subcategory: Isolated Gate Driver

ISO5852SMDWREP Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

ISO5852SMDWREP Estimated Pricing

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1+ $7.34 $7.34

Estimated market price range - modelled values for guidance only, not live distributor offers.

ISO5852SMDWREP Features

  • 1-channel isolated gate driver.
  • 5.7kVrms reinforced isolation rating.
  • 2.5A source and 5A sink peak currents.
  • 100 kV/µs minimum common-mode transient immunity.
  • Surface mount 16-SOIC package.

ISO5852SMDWREP Applications

  • Ideal for IGBT and MOSFET driving.
  • Suitable for high-voltage applications.
  • Used in motor control systems.
  • Power supply circuit designs.

ISO5852SMDWREP FAQs

6 frequently asked questions generated from this part’s specifications.
What is the isolation rating of the ISO5852SMDWREP?

The ISO5852SMDWREP has a withstand isolation voltage of 5700 Vrms and a working isolation voltage of 1500 Vrms.

What are the peak output currents for the ISO5852SMDWREP?

The ISO5852SMDWREP provides a peak output current of 2.5A when sourcing and 5A when sinking.

What is the operating temperature range for this gate driver?

The operating temperature range for the ISO5852SMDWREP is -55°C to 125°C.

What package type is the ISO5852SMDWREP available in?

The ISO5852SMDWREP is available in a 16-SOIC package with a surface mount type.

What is the propagation delay of the ISO5852SMDWREP?

The propagation delay time for the ISO5852SMDWREP is 0.076 µs.

What is the common-mode transient immunity of the ISO5852SMDWREP?

The ISO5852SMDWREP has a minimum common-mode transient immunity of 100 kV/µs.

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