Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
41 pcs
|
41 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The ISL9V3040D3S is a single IGBT from On Semiconductor designed for high voltage switching applications. It features a collector-emitter voltage rating of 430V, a collector current rating of 21A, and a power dissipation capacity of 150W. The gate charge is 17 nC, and the collector-emitter saturation voltage is 1.6V at 4V gate voltage and 6A collector current. The device has a logic input type, making it suitable for direct drive from logic-level circuits.
Packaged in a TO-252-3 (DPak) surface mount package with a supplier device package of TO-252AA, the ISL9V3040D3S supports surface mount assembly. The operating junction temperature range is -40°C to 175°C, enabling use in harsh environments. The turn-on delay time is typically 4.8 µs under specified test conditions.
This IGBT is suitable for power conversion circuits, motor drives, and other high voltage switching applications where a logic-level gate drive is advantageous. The compact TO-252AA package is space-efficient for modern electronic designs.
430 V.
TO-252-3, DPak (2 Leads + Tab), SC-63; supplier device package TO-252AA.
-40°C to 175°C (junction).
RoHS3 Compliant (unverified).
21 A.
150 W.
17 nC.