| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,550 pcs
|
1550 pcs | On Request | 1 | On Request | On Request | 241 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ISL9N312AS3ST is an N-Channel Power MOSFET manufactured by On Semiconductor. It is designed for surface-mount applications and is housed in a TO-263-3 (D2Pak) package. This MOSFET offers a drain-source voltage (Vdss) of 30V and a continuous drain current of 58A at 25°C case temperature. The device features a low on-resistance of 12mOhm maximum at 10V gate drive, ensuring efficient switching performance. The maximum gate charge is 38nC at 10V, and input capacitance is 1450pF at 15V drain-source voltage. The operating junction temperature range is -55°C to 175°C, making it suitable for high-temperature environments. The device is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited). Typical applications include power management, DC-DC converters, and motor control circuits.
| Qty | Low | High |
|---|---|---|
| 235+ | $1.27 | $1.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Drain-source voltage (Vdss) is 30V.
It is available in TO-263-3, D2Pak (2 leads + tab), TO-263AB surface-mount package.
Junction temperature range is -55°C to 175°C.
It is listed as RoHS3 compliant (unverified).
Continuous drain current is 58A at 25°C case temperature.
Maximum Rds(on) is 12mOhm at 58A and 10V gate voltage.
Maximum gate threshold voltage is 3V at 250µA drain current.