ISL9N306AS3ST N-Channel Power MOSFET from On Semiconductor. Features 30V drain-to-source voltage, 75A continuous drain current, and 6mOhm maximum on-resistance at 10V gate drive.
Mfr Part #:

ISL9N306AS3ST

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel Power MOSFET from On Semiconductor. Features 30V drain-to-source voltage, 75A continuous drain current, and 6mOhm maximum on-resistance at 10V gate drive.
✓ Total Stock: 600 pcs
$ Price Range: $0.55

ISL9N306AS3ST Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
600 pcs
600 pcs On Request 1 On Request On Request 06+ On Request On Request

ISL9N306AS3ST Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

ISL9N306AS3ST Description

Short technical summary and product information.

The ISL9N306AS3ST is an N-Channel power MOSFET from On Semiconductor, designed for high-efficiency switching applications. It utilizes MOSFET (Metal Oxide) technology and is rated for a drain-to-source voltage of 30V and a continuous drain current of 75A at case temperature. The device features a very low on-resistance of 6mOhm maximum at 10V gate drive, enabling low conduction losses.

 

Key electrical characteristics include a maximum gate charge of 90nC at 10V and an input capacitance of 3400pF at 15V drain-source voltage, which contribute to efficient switching performance. The gate threshold voltage is 3V maximum at 250µA, and the maximum gate-source voltage is ±20V. The device is capable of dissipating up to 125W at ambient temperature.

 

The MOSFET is housed in a surface-mount TO-263-3 (D²Pak) package, also known as TO-263AB, which offers good thermal performance and is suitable for automated assembly. The operating junction temperature ranges from -55°C to 175°C, making it suitable for harsh environments.

ISL9N306AS3ST Quick Information

Product Type: Power MOSFET
Canonical Name: On Semiconductor ISL9N306AS3ST N-Channel MOSFET, 30V, 75A, TO-263AB
Subcategory: N-Channel MOSFET

ISL9N306AS3ST Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: Non-Compliant

ISL9N306AS3ST Estimated Pricing

Qty Low High
550+ $0.55 $0.55

Estimated market price range - modelled values for guidance only, not live distributor offers.

ISL9N306AS3ST Features

  • N-Channel MOSFET with 30V drain-to-source voltage.
  • 75A continuous drain current capability.
  • Low 6mOhm on-resistance at 10V gate drive.
  • Surface mount TO-263AB (D²Pak) package.
  • Wide operating temperature range -55°C to 175°C.

ISL9N306AS3ST Applications

  • Suitable for high-efficiency power supplies.
  • Ideal for DC-DC converter circuits.
  • Used in motor control applications.
  • Applicable for battery management systems.
  • Suitable for automotive and industrial environments.

ISL9N306AS3ST FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the ISL9N306AS3ST?

The maximum drain-to-source voltage is 30V.

What package does the ISL9N306AS3ST come in?

The device is available in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB surface mount package.

What is the operating temperature range of the ISL9N306AS3ST?

The junction temperature range is -55°C to 175°C.

Is the ISL9N306AS3ST RoHS compliant?

The device is listed as RoHS3 compliant, but this is unverified and should be confirmed.

What is the maximum drain current of the ISL9N306AS3ST?

The maximum drain current is 75A at case temperature.

What is the on-resistance of the ISL9N306AS3ST?

The maximum drain-to-source on-resistance is 6mOhm at 75A and 10V gate drive.

What is the gate charge of the ISL9N306AS3ST?

The maximum gate charge is 90nC at 10V gate-source voltage.

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