| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ISL9N306AP3 is an N-Channel Power MOSFET manufactured by On Semiconductor. It is designed for high-efficiency power switching applications requiring a drain-source voltage rating of 30V and a continuous drain current of 75A at case temperature. The device features a maximum on-resistance of 6mOhm at 10V gate drive, enabling low conduction losses.
This MOSFET utilizes advanced technology to achieve a gate charge of 90nC and input capacitance of 3400pF, making it suitable for moderate-frequency switching. The gate threshold voltage is 3V maximum at 250µA, and the device can be driven with logic-level voltages as low as 4.5V for reduced Rds(on). The maximum power dissipation is 125W at ambient temperature, and the junction temperature range is -55°C to 175°C.
The ISL9N306AP3 is offered in a TO-220-3 through-hole package with a supplier device package of TO-220AB. This package is widely used for power devices and allows for easy mounting on heatsinks. The device is RoHS3 compliant and has an MSL level of 1 (unlimited). It is suitable for a variety of power management circuits including DC-DC converters, motor drives, and load switches.
-55°C to 175°C (junction temperature).
TO-220-3 through-hole package (supplier device package TO-220AB).
Yes, it is listed as RoHS3 compliant, but this is unverified.
30V.
75A at case temperature.
6mOhm maximum at Id=75A and Vgs=10V.
90nC maximum at Vgs=10V.