| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ISL9N306AD3ST is an N-Channel Power MOSFET manufactured by On Semiconductor. It utilizes MOSFET (Metal Oxide) technology and is designed for high-efficiency switching applications. Key electrical specifications include a maximum drain-source voltage of 30V, continuous drain current of 50A at case temperature, and a low drain-source on-resistance of 6mOhm at 10V gate drive and 50A.
Additional characteristics include a total gate charge of 90nC at 10V, input capacitance of 3400pF at 15V drain-source voltage, and a gate threshold voltage of 3V at 250µA. The device is rated for a maximum power dissipation of 125W and operates over a junction temperature range of -55°C to 175°C. Drive voltage is specified at 4.5V and 10V.
The ISL9N306AD3ST is offered in a surface-mount TO-252-3 (DPAK) package, suitable for automated assembly processes. The part is specified as RoHS3 compliant (unverified) and MSL level 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 550+ | $0.55 | $0.55 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
50A at case temperature (Tc).
6mOhm at 10V gate drive and 50A drain current.
TO-252-3 (DPAK) surface mount.
-55°C to 175°C junction temperature.
90nC at 10V gate voltage.
RoHS3 compliant (unverified, low confidence).