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ISL9N303AS3ST N-Channel MOSFET with 30V drain-source voltage, 75A continuous drain current, and 3.2mΩ maximum on-resistance at 10V gate drive. Housed in a D2PAK (TO-263) surface-mount package.
Mfr Part #:

ISL9N303AS3ST

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 30V drain-source voltage, 75A continuous drain current, and 3.2mΩ maximum on-resistance at 10V gate drive. Housed in a D2PAK (TO-263) surface-mount package.
✓ Total Stock: 25,000 pcs
$ Price Range: $1.93

ISL9N303AS3ST Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
25,000 pcs
On Request
25000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

ISL9N303AS3ST Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Tape Width
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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ISL9N303AS3ST Description

Short technical summary and product information.

This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Key specifications: 30V drain-source breakdown voltage, 75A continuous drain current (TC=25°C, VGS=10V), 3.2mΩ maximum on-resistance at VGS=10V, 2.6mΩ typical. Gate charge is 115nC typical (0-10V) and 61nC typical (0-5V). Input capacitance is 7000pF typical. The device is rated for operation from -55°C to 175°C junction temperature. Available in a D2PAK (TO-263) surface-mount package with tape and reel packaging (800 units per reel).

ISL9N303AS3ST Quick Information

Product Type: MOSFET
Series: UltraFET
Canonical Name: ISL9N303AS3ST N-Channel MOSFET 30V 75A D2PAK
Subcategory: N-Channel MOSFET

ISL9N303AS3ST Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

ISL9N303AS3ST Estimated Pricing

Qty Low High
156+ $1.93 $1.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

ISL9N303AS3ST Features

  • Fast switching trench MOSFET technology.
  • Low on-resistance: 3.2mΩ max at 10V gate drive.
  • High continuous drain current: 75A.
  • Low gate charge: 115nC typical.
  • Surface-mount D2PAK (TO-263) package.

ISL9N303AS3ST Applications

  • Optimized for DC/DC converters.
  • Suitable for high-frequency switching circuits.
  • Used in PWM applications.

ISL9N303AS3ST FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V maximum.

What is the maximum continuous drain current?

75A at TC=25°C with VGS=10V.

What is the on-resistance?

3.2mΩ maximum at VGS=10V and ID=75A.

What is the operating temperature range?

-55°C to 175°C junction temperature.

What package is the device available in?

D2PAK (TO-263) surface-mount package.

Is the device RoHS compliant?

RoHS3 compliant according to distributor data, but unverified. Confirm with manufacturer.

What is the typical total gate charge?

115nC typical for VGS=0V to 10V at VDD=15V, ID=75A.

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