| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | 420 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ISL9N302AS3 is an N-Channel enhancement-mode power MOSFET manufactured by On Semiconductor using MOSFET (Metal Oxide) technology. It is designed for high-current switching applications requiring efficient power management.
Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) rating of 75A at case temperature (Tc). The device achieves a low maximum on-resistance (Rds(on)) of 2.3 mOhm when driven with 10V at the gate, and 4.5V drive is also supported. Maximum gate charge (Qg) is 300 nC at 10V, and input capacitance (Ciss) is 11000 pF at 15V drain-source voltage. The maximum power dissipation is 345W at case temperature.
The ISL9N302AS3 is housed in a TO-262-3 (I2PAK) through-hole package with long leads, suitable for PCB mounting with robust thermal performance. The device is rated for a maximum gate-source voltage of ±20V and has a maximum gate threshold voltage (Vgs(th)) of 3V at 250 µA drain current.
| Qty | Low | High |
|---|---|---|
| 133+ | $2.25 | $2.25 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 30V.
The continuous drain current (Id) is 75A at case temperature (Tc).
The maximum on-resistance (Rds(on)) is 2.3 mOhm at Id = 75A and Vgs = 10V.
It uses a through-hole TO-262-3 (I2PAK, TO-262AA) package with long leads.
The maximum power dissipation is 345W at case temperature (Tc).
The maximum gate threshold voltage (Vgs(th)) is 3V at Id = 250 µA.
The database indicates RoHS3 compliance, but this is unverified and there is a conflict between distributor sources.