| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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416 pcs
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416 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ISL9N302AP3 is an N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFET manufactured by On Semiconductor. This device employs advanced trench MOSFET technology to achieve low gate charge while maintaining low on-resistance, making it suitable for high-efficiency switching applications.
Key electrical specifications include a maximum drain-to-source voltage of 30V, continuous drain current of 75A at 25°C case temperature, and a maximum on-resistance of 2.5 mOhm at 75A and 10V gate drive. The gate threshold voltage is 3V maximum at 250µA. The device features low typical gate charge of 110nC at 5V and 31nC Miller charge, enabling fast switching.
The ISL9N302AP3 is offered in a TO-220-3 through-hole package with a junction-to-case thermal resistance of 0.43°C/W and maximum power dissipation of 345W. It operates over a junction temperature range of -55°C to 175°C. The device is optimized for DC/DC converters and other power management circuits requiring high efficiency and high switching frequencies.
30V maximum.
TO-220-3 through-hole package.
-55°C to 175°C junction temperature.
It is listed as RoHS3 Compliant, but this is unverified.
1.9 mOhm typical at 75A, 10V.
3V at 250µA.
11000 pF at 15V, 1MHz.