| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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8,932 pcs
|
8932 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
4,906 pcs
|
4906 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
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The ISL95808HRZ-T from Renesas Electronics Corporation is a high-performance gate driver IC. It is specifically designed for driving N-Channel MOSFETs in half-bridge configurations.
This device features a supply voltage range of 4.5V to 5.5V, with a maximum bootstrap voltage of 33V. It provides an output current of 4A and peak output currents of 2A for both source and sink operations. The rise and fall times are both rated at 8ns, ensuring efficient switching.
Packaged in an 8-VFDFN exposed pad (2x2mm), the ISL95808HRZ-T is suitable for surface mount applications. Its operating temperature range is -10°C to 125°C (TJ), making it robust for various environments. The non-inverting input type and synchronous channel type further define its operational characteristics.
This gate driver is a key component for power management applications requiring precise control over MOSFET switching in half-bridge topologies.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
4.5V to 5.5V.
-10°C to 125°C.
4A continuous, 2A peak source/sink.
8-DFN (2x2mm) surface mount.
2 drivers.
N-Channel MOSFET.
8ns typical.