| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,548 pcs
|
6548 pcs | On Request | 1 | On Request | On Request | 1150+ | On Request | On Request | |
|
4,945 pcs
|
4945 pcs | On Request | 1 | On Request | On Request | 13+18+ | On Request | On Request |
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| High Side Voltage | |
| Industrial Grade | |
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| Lead Style | |
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| Operating Temperature | |
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| Tape & Reel |
The ISL6208BCRZ-T from Renesas Electronics is a half-bridge gate driver IC, specifically designed for driving N-channel MOSFETs in synchronous applications. It features a supply voltage range of 4.5V to 5.5V, ensuring compatibility with various power management systems.
Key electrical specifications include a peak output current of 2A for both source and sink, and fast rise/fall times of 8ns, enabling efficient switching. The device supports a high-side bootstrap voltage of up to 33V and operates within a temperature range of -10°C to 125°C.
This IC is housed in an 8-QFN (3x3mm) package with an exposed pad, suitable for surface mounting. Its non-inverting input type and synchronous channel capability make it a versatile component for power electronics designs. The logic input voltage levels are 0.5V for VIL and 2V for VIH.
Designed for robust performance, the ISL6208BCRZ-T is compliant with RoHS3 and REACH regulations, with an MSL rating of 1.
4.5V to 5.5V.
8-QFN (3x3).
-10°C to +125°C (junction).
2.
2A source and sink.
N-Channel MOSFET.
Non-Inverting.