| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
26,020 pcs
|
26020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ISC230N10NM6ATMA1 is a 100V, 31A N-Channel enhancement mode power MOSFET based on Infineon's advanced OptiMOS 6 trench technology.
This device offers very low on-resistance (RDS(on) max 23 mΩ at 10V gate drive) and excellent gate charge (Qg typ 7.4 nC), making it suitable for high-frequency switching and synchronous rectification applications. It is rated for operation over a junction temperature range of -55°C to 175°C.
The MOSFET is housed in a PG-TDSON-8 FL surface-mount package and is fully RoHS compliant with halogen-free molding compound. It is MSL 1 classified and qualified per JEDEC for industrial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.76 | $1.76 |
| 10+ | $1.11 | $1.11 |
| 100+ | $0.73 | $0.73 |
| 500+ | $0.58 | $0.58 |
| 1,000+ | $0.51 | $0.51 |
| 2,500+ | $0.47 | $0.47 |
| 5,000+ | $0.43 | $0.43 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The package is PG-TDSON-8 FL, a surface-mount package.
-55°C to 175°C (junction temperature).
Yes, the device is RoHS compliant and halogen-free according to IEC61249-2-21.