ISC027N10NM6ATMA1 Infineon ISC027N10NM6ATMA1 is an N-Channel MOSFET with 100V drain-source voltage, 192A continuous drain current, and ultra-low on-resistance of 2.7 mΩ. It comes in a PG-TDSON-8 FL surface-mount package.
Mfr Part #:

ISC027N10NM6ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon ISC027N10NM6ATMA1 is an N-Channel MOSFET with 100V drain-source voltage, 192A continuous drain current, and ultra-low on-resistance of 2.7 mΩ. It comes in a PG-TDSON-8 FL surface-mount package.
✓ Total Stock: 25 pcs
$ Price Range: $1.66 - $4.49

ISC027N10NM6ATMA1 Available from 1 distributor

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ISC027N10NM6ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

ISC027N10NM6ATMA1 Description

Short technical summary and product information.

The ISC027N10NM6ATMA1 is a 100V N-Channel MOSFET from Infineon's OptiMOS 6 series, designed for high-efficiency power conversion. It features a maximum drain-source voltage of 100V, continuous drain current of 192A at case temperature 25°C, and a typical on-resistance of 2.7 mΩ at 10V gate drive. The device offers excellent switching performance with a typical gate charge of 58 nC (0V to 10V) and low output charge (107 nC typical).

 

It is optimized for high-frequency switching and synchronous rectification applications, with a maximum operating junction temperature of 175°C. The MOSFET is fully qualified for industrial applications according to JEDEC standards.

 

The device is packaged in a PG-TDSON-8 FL (8-PowerTDFN) surface-mount package, which provides enhanced thermal performance. It is RoHS compliant, halogen-free, and MSL 1 rated. The part is also available in tape and reel packaging for automated assembly.

ISC027N10NM6ATMA1 Quick Information

Product Type: Power MOSFET
Series: OptiMOS 6
Canonical Name: Infineon Technologies ISC027N10NM6ATMA1 N-Channel MOSFET
Subcategory: N-Channel MOSFET

ISC027N10NM6ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

ISC027N10NM6ATMA1 Estimated Pricing

Qty Low High
1+ $4.49 $4.49
10+ $2.96 $2.96
100+ $2.09 $2.09
500+ $1.77 $1.77
5,000+ $1.66 $1.66

Estimated market price range - modelled values for guidance only, not live distributor offers.

ISC027N10NM6ATMA1 Features

  • High current N-Channel MOSFET rated at 192A.
  • Low on-resistance of 2.7 mΩ at 10V Vgs.
  • Optimized for high frequency switching applications.
  • High operating temperature up to 175°C.
  • Surface-mount package with enhanced thermal performance.

ISC027N10NM6ATMA1 Applications

  • Ideal for synchronous rectification in power supplies.
  • Used in high-efficiency DC-DC converters.
  • Suitable for motor control and battery management.
  • Applicable in telecom and server power systems.

ISC027N10NM6ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the ISC027N10NM6ATMA1?

The maximum drain-source voltage is 100 V.

What package does the ISC027N10NM6ATMA1 come in?

It comes in an 8-PowerTDFN (PG-TDSON-8 FL) surface-mount package.

What is the operating temperature range of the ISC027N10NM6ATMA1?

The operating junction temperature range is -55°C to 175°C.

Is the ISC027N10NM6ATMA1 RoHS compliant?

Yes, it is RoHS3 compliant as stated in the datasheet.

What is the maximum continuous drain current of the ISC027N10NM6ATMA1?

The maximum continuous drain current is 192 A at case temperature 25°C.

What is the typical gate charge of the ISC027N10NM6ATMA1?

The typical gate charge from 0V to 10V is 58 nC.

What is the on-resistance of the ISC027N10NM6ATMA1?

The maximum drain-source on-resistance is 2.7 mΩ at 50 A and 10V Vgs.

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