| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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25,000 pcs
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25000 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
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| Halogen Free | |
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The Infineon ISC022N10NM6 is a high-performance N-channel MOSFET belonging to the OptiMOSTM 6 series. It is designed for demanding applications requiring efficient power conversion, such as high-frequency switching and synchronous rectification.
Key electrical characteristics include a maximum drain-source voltage (VDS) of 100V and a maximum continuous drain current (ID) of 230A at 25°C with a gate-source voltage of 10V. The on-resistance (RDS(on)) is a low 2.24 mΩ at a VGS of 10V and ID of 230A. The device also features excellent gate charge times RDS(on) product (FOM) and very low reverse recovery charge (Qrr).
With a maximum operating temperature of 175°C, this MOSFET is suitable for high-power density designs. It is packaged in a PG-TSON-8-3 surface-mount package, optimized for thermal performance and ease of integration.
The ISC022N10NM6 is Pb-free and Halogen-free, compliant with RoHS standards. It is fully qualified according to JEDEC for Industrial Applications.
The maximum drain-source voltage (VDS) for the ISC022N10NM6 is 100V.
The maximum continuous drain current (ID) is 230A at 25°C with VGS=10V.
The maximum on-resistance (RDS(on)) is 2.24 mΩ when VGS is 10V and ID is 230A.
The maximum operating temperature for the ISC022N10NM6 is 175°C.
The ISC022N10NM6 is supplied in the PG-TSON-8-3 package.
Yes, the ISC022N10NM6 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the ISC022N10NM6 is 1 Unlimited.