| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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13,289 pcs
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13289 pcs | On Request | 1 | On Request | On Request | 1653+ | On Request | On Request |
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The IS66WVE4M16TBLL-70BLI is a 64Mbit Pseudo Static Random Access Memory (PSRAM) device from Integrated Silicon Solution, organized as 4M words by 16 bits. This memory solution utilizes a self-refresh DRAM array and offers an asynchronous and page mode interface.
Key electrical specifications include a memory size of 64Mbit, a parallel interface, and a volatile memory type. The device boasts a fast access time of 70ns and a write cycle time of 70ns. It operates within a voltage range of 2.7V to 3.6V and has an operating temperature range of -40°C to 85°C.
This PSRAM includes several power-saving modes such as Partial Array Refresh and Deep Power Down, which help reduce standby current. Standby current is specified at a maximum of 200 uA at -40°C to 85°C, while deep power-down current is typically less than 10µA for the BLL variant. Asynchronous operation draws less than 30 mA, and intrapage reads consume less than 23mA.
The IS66WVE4M16TBLL-70BLI is supplied in a 48-ball TFBGA package, suitable for surface mount applications. Its technology is classified as PSRAM (Pseudo SRAM), offering a balance of DRAM density and SRAM simplicity.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage range is 2.7V to 3.6V.
It comes in a 48-TFBGA (6x8mm) surface mount package.
The operating temperature range is -40°C to 85°C (industrial).
The memory is 64Mbit organized as 4M x 16 bits.
Access time is 70ns for both read and write cycles.
The memory uses a parallel interface.
This is a PSRAM (Pseudo SRAM) volatile memory.