| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | 2115 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Industrial Grade | |
| Interface | |
| Lead Style | |
| Memory Size | |
| Memory Type | |
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| Package / Case | |
| SVHC Present |
The IS66WVE4M16EBLL-70BLI from ISSI is a 64Mbit Pseudo Static Random Access Memory (PSRAM) integrated circuit. It utilizes a self-refresh DRAM array organized as 4M words by 16 bits, offering both asynchronous and page mode interfaces for flexible operation.
This PSRAM includes several power-saving modes, such as Partial Array Refresh and Deep Power Down, to reduce standby current. It supports dual voltage rails for optional performance tuning, with specific configurations for ALL, BLL, and CLL variants. The device offers fast access times, with interpage read access at 60ns/70ns and intrapage read access at 25ns.
Designed for low-power applications, the IS66WVE4M16EBLL-70BLI operates within industrial temperature ranges from -40°C to 85°C, with automotive grades extending to 105°C. It is housed in a compact 48-ball TFBGA package, suitable for space-constrained designs. The device consumes low power during operation, with standby currents as low as 200 uA (max.) and deep power-down currents as low as 3µA (Typ) for ALL/CLL variants.
64Mbit PSRAM organized 4M x 16.
Asynchronous and page mode.
1.7V to 1.95V (ALL/CLL), 2.7V to 3.6V (BLL).
60ns interpage read, 25ns intrapage read (max).
48-ball TFBGA.
Industrial and automotive A1: -40°C to 85°C; automotive A2: -40°C to 105°C.