| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,150 pcs
|
3150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Access Time | |
| Memory Format | |
| Memory Interface | |
| Memory Organization | |
| Memory Size | |
| Memory Type | |
| Mounting Type | |
| Operating Temperature | |
| Operating Voltage | |
| Supplier Device Package | |
| Technology | |
| Voltage | |
| Write Cycle Time |
The IS66WVE4M16EBLL-70BLI is a 64Mbit Pseudo Static Random Access Memory (PSRAM) device from Integrated Silicon Solution, organized as 4M words by 16 bits. It utilizes a self-refresh DRAM array and offers asynchronous and page mode interfaces.
Key electrical specifications include a 70ns access time and a 70ns write cycle time. The device operates with a voltage range of 2.7V to 3.6V. Power-saving features such as Partial Array Refresh and Deep Power Down mode are incorporated to reduce standby current, with standby current specified at a maximum of 200 uA and deep power-down current typically below 3 uA.
This PSRAM is housed in a 48-TFBGA package and is designed for surface mounting. The operating temperature range is -40°C to 85°C.
This component is suitable for low-power, portable applications requiring high-speed memory access.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
64Mbit.
Volatile PSRAM (Pseudo SRAM).
70ns.
2.7V to 3.6V.
-40°C to 85°C.
48-TFBGA (6x8mm).
4M x 16.