| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,410 pcs
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4410 pcs | On Request | 1 | 48 | On Request | 1809+ | On Request | On Request |
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The IS66WVE2M16TCLL-70BLI-TR is a 32Mbit Pseudo Static Random Access Memory (PSRAM) device from Integrated Silicon Solution, Inc. It utilizes a self-refresh DRAM array organized as 2M words by 16 bits, offering a high-speed asynchronous and page mode interface.
Key electrical specifications include a memory size of 32Mbit, organized as 2M x 16 bits, with a parallel interface. It boasts a fast access time of 70 ns and a write cycle time of 70 ns. The device operates within a voltage range of 1.7V to 1.95V, making it suitable for low-power applications.
This PSRAM is designed for industrial operating temperatures, ranging from -40°C to 85°C. It is housed in a compact 48-ball Thin Fine-pitch Ball Grid Array (TFBGA) package, suitable for surface mounting. The memory type is volatile, and it employs PSRAM technology to combine the speed of SRAM with the density of DRAM.
Low power consumption is a key feature, with options for partial array refresh and deep power-down modes to reduce standby current. This makes it ideal for portable and power-sensitive electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage range is 1.7V to 1.95V for both VDD and VDDQ.
It is available in a 48-TFBGA (6x8 mm) package.
The industrial temperature range is -40°C to 85°C.
32 Mbit (2M x 16).
70 ns.
Parallel.
PSRAM (Pseudo SRAM).