| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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706 pcs
|
706 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This high-speed, 8Mbit Pseudo SRAM (PSRAM) from Integrated Silicon Solution, Inc. (ISSI) is organized as 512K words by 16 bits. Fabricated using ISSI's high-performance CMOS technology, it offers low power consumption.
The IS66WV51216DBLL-55TLI provides a fast access time of 55ns, making it suitable for various applications requiring quick data retrieval. It operates on a single power supply ranging from 2.5V to 3.6V, with a typical operating temperature range of -40°C to 85°C.
The component is available in a 44-TSOP II package, designed for surface mounting. Its memory interface is parallel, and it supports both upper and lower byte data control for flexible memory access. The device also features three-state outputs and easy memory expansion capabilities through Chip Enable and Output Enable inputs.
This PSRAM is designed for applications where high-speed, low-power static RAM functionality is required. Its reliable performance and compact package make it a versatile choice for embedded systems and other electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2.5V to 3.6V.
44-TSOP II surface mount package (0.400 inch, 10.16mm body width).
-40°C to +85°C (TA).
The memory size is 8Mbit, organized as 512K x 16.
The access time is 55ns.
The write cycle time is 55ns.
It uses a parallel interface.