| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,909 pcs
|
2909 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ISSI IS66WV25616BLL-55TLI is a high-speed, 4Mbit static RAM organized as 256K words by 16 bits. Fabricated using ISSI's high-performance CMOS technology, this device offers high performance and low power consumption.
Key electrical specifications include an access time of 55ns and a write cycle time of 55ns. It operates from a single power supply ranging from 2.5V to 3.6V. The device supports three-state outputs and features data control for upper and lower bytes, enabling byte-level access.
Designed for industrial temperature ranges, the IS66WV25616BLL-55TLI is available in a 44-pin TSOP Type II package. It is suitable for applications requiring fast, low-power memory solutions. When deselected, the device enters a standby mode, significantly reducing power dissipation.
Easy memory expansion is facilitated through Chip Enable and Output Enable inputs. The active-low Write Enable (WE) controls both writing and reading operations. This PSRAM is ideal for embedded systems and other applications demanding efficient memory performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2.5V to 3.6V.
-40°C to 85°C.
44-TSOP II (0.400", 10.16mm Width).
4Mbit.
256K x 16.
55 ns.
55 ns.