| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,249 pcs
|
7249 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Access Time | |
| Clock Frequency | |
| Memory Format | |
| Memory Interface | |
| Memory Organization | |
| Memory Size | |
| Memory Type | |
| Mounting Type | |
| Operating Temperature | |
| Supplier Device Package | |
| Technology | |
| Voltage |
This Integrated Silicon Solution IS64LF12836EC-7.5B3LA3 is a high-speed, low-power synchronous flow-through SRAM designed for demanding applications. It offers a memory size of 4.5Mbit, organized as 128K x 36 bits, with a fast clock frequency of 117 MHz and an access time of 7.5 ns.
The device operates within a voltage range of 3.135V to 3.465V and supports an industrial operating temperature range of -40°C to 125°C. It features internal self-timed write cycles, individual byte write control, and burst sequence control. The SRAM is fabricated using advanced CMOS technology.
Packaged in a 165-TFBGA (13x15) format, this component is designed for surface mounting. Its synchronous, SDR technology makes it suitable for high-performance memory needs in communication and networking applications. The datasheet indicates a clock access time of 6.5 ns and a cycle time of 7.5 ns.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 4.5Mbit.
The clock frequency is 117 MHz.
The access time is 7.5 ns.
The operating voltage is between 3.135V and 3.465V.
The operating temperature range is -40°C to 125°C (TA).
It is in a 165-TFBGA (13x15) package.
The technology is SRAM - Synchronous, SDR.