| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,827 pcs
|
5827 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
2,032 pcs
|
2032 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,196 pcs
|
1196 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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The Integrated Silicon Solution IS62WV25616BLL-55BLI is a high-speed, low-power, 4Mbit Static Random Access Memory (SRAM) organized as 256K words by 16 bits. It utilizes advanced CMOS technology for reliable performance and low power consumption.
This asynchronous SRAM offers an access time of 55ns and a write cycle time of 55ns. It operates from a single power supply ranging from 2.5V to 3.6V, making it suitable for various low-voltage applications. The device features TTL compatible interface levels and fully static operation, requiring no clock or refresh.
The IS62WV25616BLL-55BLI is available in a 48-TFBGA package with surface mount technology. It consumes a typical operating power of 36mW and a typical standby power of 9µW. The memory interface is parallel, and it supports data control for upper and lower bytes.
This SRAM is designed for applications requiring fast data access and low power consumption. Its industrial temperature range of -40°C to 85°C (TA) ensures reliable operation in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The access time is 55ns, with a 70ns option available.
For the IS62WV25616BLL variant, the operating voltage is 2.5V to 3.6V.
The operating temperature range is -40°C to 85°C.
The device is available in a 48-TFBGA (6x8) package.
The memory is organized as 256K words by 16 bits (256K x 16).
Typical operating power is 36mW, and standby power is 9µW.