| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,698 pcs
|
6698 pcs | On Request | 1 | On Request | On Request | 1611+ | On Request | On Request |
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The Integrated Silicon Solution IS61WV6416DBLL-10BLI is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. Fabricated using ISSI's high-performance CMOS technology, this device offers a fast access time of 10 ns and a write cycle time of 10 ns.
It operates from a single power supply voltage ranging from 2.4V to 3.6V. The memory is fully static, requiring no clock or refresh cycles. It includes three-state outputs and data control for upper and lower bytes. The device is designed for low active power consumption of 135 mW typical and low standby power of 12 µW typical.
This SRAM is available in a 48-TFBGA package with surface mount mounting type. It supports an industrial operating temperature range of -40°C to 85°C (TA).
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2.4V to 3.6V.
48-TFBGA (6x8) surface mount.
-40°C to 85°C.
10 ns (typical and maximum).
1Mbit organized as 64K x 16.
135 mW active, 12 µW standby.
Parallel.