| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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30,724 pcs
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30724 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
30,724 pcs
|
30724 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Integrated Silicon Solution IS61WV5128EDBLL-10BLI is a high-speed, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. Fabricated using ISSI's high-performance CMOS technology, this device offers a fast access time of 10 ns and low active power consumption of 85 mW typical.
This asynchronous SRAM requires no clock or refresh cycles, simplifying system design. It operates from a single power supply ranging from 2.4V to 3.6V. The device features three-state outputs and is suitable for industrial and automotive temperature ranges. Error detection and correction (ECC) are integrated into the design.
The IS61WV5128EDBLL-10BLI is available in a 36-TFBGA (6x8mm) package, designed for surface mounting. Its static operation and low power characteristics make it suitable for various memory applications where speed and reliability are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The access time for the IS61WV5128EDBLL-10BLI is 10 ns.
The operating voltage range for the IS61WV5128EDBLL-10BLI is 2.4V to 3.6V.
The memory organization is 512K x 8 bits, totaling 4Mbit.
It uses Asynchronous CMOS Static RAM technology.
The operating temperature range is -40°C to 85°C (TA).
Yes, the IS61WV5128EDBLL-10BLI features Error Detection and Error Correction.