| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,574 pcs
|
1574 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
16 pcs
|
16 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Access Time | |
| Memory Format | |
| Memory Interface | |
| Memory Organization | |
| Memory Size | |
| Memory Type | |
| Mounting Type | |
| Operating Temperature | |
| Supplier Device Package | |
| Technology | |
| Voltage | |
| Write Cycle Time |
The IS61WV51232BLL-10BLI is a 16Mbit asynchronous SRAM from Integrated Silicon Solution Inc. It is organized as 512K words by 32 bits and provides a fast access time of 10 nanoseconds. The device operates from a wide supply voltage range of 1.65V to 3.6V, making it suitable for low-power and battery-operated applications.
This memory utilizes a parallel interface, simplifying connection to microcontrollers and processors. The asynchronous nature means no clock is required for read and write operations, reducing design complexity. The part is housed in a 90-pin Thin Fine Pitch BGA (TFBGA) package, offering a compact footprint for space-constrained designs.
Typical applications include high-speed cache memory, networking equipment, industrial control systems, and embedded computing. The 10ns access time ensures fast data throughput, while the 32-bit wide data bus enables efficient data transfers. The device is volatile, meaning data is retained only while power is applied.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1.65V to 3.6V.
10 nanoseconds.
16Mbit organized as 512K words by 32 bits (512K x 32).
Volatile asynchronous SRAM.
Parallel interface.
Volatile.
90-pin TFBGA (Thin Fine Pitch BGA).