| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,540 pcs
|
1540 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Integrated Silicon Solution IS61WV51216BLL-10MLI is a high-speed, 8M-bit static RAM organized as 512K words by 16 bits. Fabricated using a high-performance CMOS process, this device offers low power consumption and reliable operation.
Key electrical specifications include an access time of 10 ns and a write cycle time of 10 ns. The device operates from a voltage supply range of 2.4V to 3.6V. It is designed for fully static operation, requiring no clock or refresh cycles.
This SRAM is packaged in a 48-ball miniBGA (9mm x 11mm) and supports surface mounting. The operating temperature range is -40°C to 85°C (TA). The memory interface is parallel, and the memory type is volatile.
Designed for easy memory expansion, it features Chip Enable (CE) and Output Enable (OE) options, along with data control for upper and lower bytes (UB and LB).
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
8 Mbit organized as 512K x 16.
10 ns.
Volatile SRAM - Asynchronous.
Parallel.
2.4V to 3.6V.
-40°C to 85°C.
48-miniBGA (9x11).